Researchers demonstrate controlled formation of single-photon emitters in AlN through proton irradiation and annealing, with efficiency dramatically enhanced under N-rich growth conditions—achieving 8×10⁷ cm⁻² emitter density.

Researchers demonstrate controlled formation of single-photon emitters in AlN through proton irradiation and annealing, with efficiency dramatically enhanced under N-rich growth conditions—achieving 8×10⁷ cm⁻² emitter density.