[2025 OPEN ACCESS]
Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment
2025 Appl. Phys. Express 18 016505

iopscience.iop.org/article/10.3...

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#Physics
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#Vertical
#doping
#Mg
#ion
#implantation
#diode
#Schottky

[2025 OPEN ACCESS]
Multi-channel AlN/GaN Schottky barrier diodes
2025 Appl. Phys. Express 18 016502

iopscience.iop.org/article/10.3...

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#OpenAccess
#Physics
#GaN
#Schottky
#Barrier
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#channel
#AlN/GaN
#2DEG

[2024 OPEN ACCESS]
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
2024 Appl. Phys. Express 17 104001

iopscience.iop.org/article/10.3...

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#Physics
#OpenAccess
#GaN
#HEMT
#threshold
#voltage
#instabilities
#leakage
#current
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[Spotlight 2024 : OPEN ACCESS]
High-current, high-voltage AlN Schottky barrier diodes
2024 Appl. Phys. Express 17 101002

iopscience.iop.org/article/10.3...

Spotlights
iopscience.iop.org/journal/1882...

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#Physics
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#Schottky
#diode
#powerelectronics