[2025 Open Access]
High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
2025 Appl. Phys. Express 18 126501

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#GaN
#HEMTs
#Si
#etching
#recess
#voltage
#measurements
#wave