[2025 OPEN ACCESS]
2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates
2025 Appl. Phys. Express 18 016504

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#OpenAccess
#Physics
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#Ultrawide
#bandgap
#semiconductor
#transistor
#Power

[2025 OPEN ACCESS]
3 kV monolithic bidirectional GaN HEMT on sapphire
2025 Appl. Phys. Express 18 016501

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#OpenAccess
#Physics
#GaN
#HEMT
#Bidirectional
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#Bandga
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[2024 OPEN ACCESS]
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
2024 Appl. Phys. Express 17 104001

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#Physics
#OpenAccess
#GaN
#HEMT
#threshold
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#instabilities
#leakage
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[2024 OPEN ACCESS]
Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage
2024 Appl. Phys. Express 17 096501

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#Physics
#OpenAccess
#GaN
#ohmic
#HEMT
#nitrogen
#vacancy
#ion
#beam
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[Open Access]
GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
2025 Appl. Phys. Express 18 114001

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#OpenAccess
#Physics
#GaN
#HEMT