[2024 OPEN ACCESS]
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
2024 Appl. Phys. Express 17 104001

iopscience.iop.org/article/10.3...

#APEX
#Physics
#OpenAccess
#GaN
#HEMT
#threshold
#voltage
#instabilities
#leakage
#current
#Schottky