[2025 OPEN ACCESS]
2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates
2025 Appl. Phys. Express 18 016504

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#AlGaN
#HEMT
#Ultrawide
#bandgap
#semiconductor
#transistor
#Power